XPS Depth Profiling of Air-Oxidized Nanofilms of NbN on GaN Buffer-Layers
Journal article, 2017

XPS depth chemical and phase profiling of an air-oxidized niobium nitride thin film on a buffer-layer GaN is performed. It is found that an intermediate layer of Nb5N6 and NbON x under the layer of niobium oxide is generated.I

Author

AV Lubenchenko

AA Batrakov

Sascha Krause

Chalmers, Earth and Space Sciences, Advanced Receiver Development

Alexey Pavolotskiy

Chalmers, Earth and Space Sciences, Advanced Receiver Development

IV Shurkaeva

DA Ivanov

OI Lubenchenko

Journal of Physics: Conference Series

17426588 (ISSN) 17426596 (eISSN)

Vol. 917 092001-1 - 092001-7-

Infrastructure

Onsala Space Observatory

Nanofabrication Laboratory

Subject Categories

Condensed Matter Physics

DOI

10.1088/1742-6596/917/9/092001

More information

Latest update

3/28/2018