XPS Depth Profiling of Air-Oxidized Nanofilms of NbN on GaN Buffer-Layers
Paper in proceeding, 2017

XPS depth chemical and phase profiling of an air-oxidized niobium nitride thin film on a buffer-layer GaN is performed. It is found that an intermediate layer of Nb5N6 and NbON x under the layer of niobium oxide is generated.I

Author

AV Lubenchenko

National Research University Moscow Power Engineering Institute

AA Batrakov

National Research University Moscow Power Engineering Institute

Sascha Krause

Chalmers, Earth and Space Sciences, Advanced Receiver Development

Alexey Pavolotskiy

Chalmers, Earth and Space Sciences, Advanced Receiver Development

IV Shurkaeva

National Research University Moscow Power Engineering Institute

DA Ivanov

National Research University Moscow Power Engineering Institute

OI Lubenchenko

National Research University Moscow Power Engineering Institute

Journal of Physics: Conference Series

17426588 (ISSN) 17426596 (eISSN)

Vol. 917 9 092001

4th International School and Conference "Saint Petersburg OPEN 2017" on Optoelectronics, Photonics, Engineering and Nanostructures
Saint Petersburg, Russia,

Infrastructure

Onsala Space Observatory

Nanofabrication Laboratory

Subject Categories

Condensed Matter Physics

DOI

10.1088/1742-6596/917/9/092001

More information

Latest update

7/3/2021 2