XPS Depth Profiling of Air-Oxidized Nanofilms of NbN on GaN Buffer-Layers
Paper in proceeding, 2017
XPS depth chemical and phase profiling of an air-oxidized niobium nitride thin film on a buffer-layer GaN is performed. It is found that an intermediate layer of Nb5N6 and NbON x under the layer of niobium oxide is generated.I
Author
AV Lubenchenko
National Research University Moscow Power Engineering Institute
AA Batrakov
National Research University Moscow Power Engineering Institute
Sascha Krause
Chalmers, Earth and Space Sciences, Advanced Receiver Development
Alexey Pavolotskiy
Chalmers, Earth and Space Sciences, Advanced Receiver Development
IV Shurkaeva
National Research University Moscow Power Engineering Institute
DA Ivanov
National Research University Moscow Power Engineering Institute
OI Lubenchenko
National Research University Moscow Power Engineering Institute
Journal of Physics: Conference Series
17426588 (ISSN) 17426596 (eISSN)
Vol. 917 9 092001
4th International School and Conference "Saint Petersburg OPEN 2017" on Optoelectronics, Photonics, Engineering and Nanostructures
Saint Petersburg, Russia,
Saint Petersburg, Russia,
Infrastructure
Onsala Space Observatory
Nanofabrication Laboratory
Subject Categories
Condensed Matter Physics
DOI
10.1088/1742-6596/917/9/092001