A 100-145 GHz Area-Efficient Power Amplifier in a 130 nm SiGe Technology
Paper in proceedings, 2017

A 6-stage, 8-way combining power amplifier (PA) in a 130 nm SiGe BiCMOS technology is designed and measured. This PA has an output power of 12.5 - 15.5 dBm in a frequency range from 100 GHz to 145 GHz, when the input power is about 2 dBm. The small signal gain is 19 dB and the maximum DC power consumption is 480 mW with a supply voltage of 1.87 V. The peak power added efficiency (PAE) is 6.4% in D-band. T-junctions are utilized to combine and divide millimeter-wave power. To reduce the PA's loss and chip area, neither a Wilkinson power combiner/divider nor a balun is applied. The chip size is 0.53 mm(2) (0.26 mm(2) without pads).

SiGe

Power amplifier

D-band

Author

Mingquang Bao

Ericsson

Zhongxia Simon He

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Ericsson

European Microwave Integrated Circuits Conference - Proceedings

277-280

12th European Microwave Integrated Circuits Conference (EuMIC)
Nuremberg, Germany,

Subject Categories

Telecommunications

Marine Engineering

Other Electrical Engineering, Electronic Engineering, Information Engineering

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Latest update

4/4/2018 1