Vertical Electrical Conductivity of ZnO/GaN Multilayers for Application in Distributed Bragg Reflectors
Journal article, 2018

We have demonstrated an electrically conductive ZnO/GaN multilayer structure using hybrid plasma-assisted molecular beam epitaxy. Electrical I-V characteristics were measured through the top three pairs of a six pair ZnO/GaN sample. The total measured resistance was dominated by lateral and contact resistances, setting an upper limit of similar to 10(-4) for the vertical specific series resistance of the stack. A strong contribution to the low resistance is the cancellation of spontaneous and piezoelectric polarization that occurs in the in- plane strained ZnO/GaN sample, as shown by electrical simulations. In addition, the simulations show that the actual vertical resistance of the sample could in fact be three orders of magnitude lower and that ZnO/GaN structures with thicknesses fulfilling the Bragg condition should have similar resistance. Our results suggest that ZnO/GaN distributed Bragg reflectors (DBRs) are a promising alternative to pure III-nitride DBRs in GaN-based vertical-cavity surface-emitting lasers.


vertical-cavity surface-emitting laser


electrical conductivity

distributed Bragg reflector


Filip Hjort

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Seyed Ehsan Hashemi

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

David Adolph

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Tommy Ive

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Olof Bäcke

Chalmers, Physics, Materials Microstructure

Mats Halvarsson

Chalmers, Physics, Materials Microstructure

Åsa Haglund

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

IEEE Journal of Quantum Electronics

0018-9197 (ISSN) 15581713 (eISSN)

Vol. 54 4 2400406

Subject Categories

Geotechnical Engineering

Other Materials Engineering

Condensed Matter Physics


Chalmers Materials Analysis Laboratory

Areas of Advance

Materials Science



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