A RF-DAC based 40 Gbps PAM Modulator with 1.2 pJ/bit Energy Efficiency at Millimeterwave Band
Paper in proceedings, 2018

A PAM-4 modulator is designed and fabricated in a 0.25μm indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. The modulator is verified to have a 3-dB bandwidth of 60-90 GHz and a peak output power of -5 dBm at 75 GHz. This modulator can support 40 Gbps data transmission with a bit error rate of 3.7×10−6, the energy efficiency is better than 1.2 pJ/bit. This modulator is suitable for application such as low power, short range, ultra high data rate wireless communication.

internet of things

energy efficiency

InP

wide-band

pulse amplitude modulation

RF-DAC

DHBT

Author

Frida Strömbeck

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Zhongxia Simon He

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

IEEE MTT-S International Microwave Symposium Digest

0149645X (ISSN)

Vol. 2018 931-933 8439488

2018 IEEE/MTT-S International Microwave Symposium, IMS 2018
Philadelphia, USA,

Areas of Advance

Nanoscience and Nanotechnology (2010-2017)

Subject Categories

Communication Systems

DOI

10.1109/MWSYM.2018.8439488

More information

Latest update

8/13/2019