A RF-DAC based 40 Gbps PAM Modulator with 1.2 pJ/bit Energy Efficiency at Millimeterwave Band
Paper in proceeding, 2018
A PAM-4 modulator is designed and fabricated in a 0.25μm indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. The modulator is verified to have a 3-dB bandwidth of 60-90 GHz and a peak output power of -5 dBm at 75 GHz. This modulator can support 40 Gbps data transmission with a bit error rate of 3.7×10−6, the energy efficiency is better than 1.2 pJ/bit. This modulator is suitable for application such as low power, short range, ultra high data rate wireless communication.
internet of things
energy efficiency
InP
wide-band
pulse amplitude modulation
RF-DAC
DHBT
Author
Frida Strömbeck
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Zhongxia Simon He
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Herbert Zirath
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
IEEE MTT-S International Microwave Symposium Digest
0149645X (ISSN)
Vol. 2018-June 931-933 8439488978-153865067-7 (ISBN)
2018 IEEE/MTT-S International Microwave Symposium, IMS 2018
Philadelphia, USA,
Philadelphia, USA,
Areas of Advance
Nanoscience and Nanotechnology
Subject Categories
Communication Systems
DOI
10.1109/MWSYM.2018.8439488