A RF-DAC based 40 Gbps PAM Modulator with 1.2 pJ/bit Energy Efficiency at Millimeterwave Band
Paper i proceeding, 2018
A PAM-4 modulator is designed and fabricated in a 0.25μm indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. The modulator is verified to have a 3-dB bandwidth of 60-90 GHz and a peak output power of -5 dBm at 75 GHz. This modulator can support 40 Gbps data transmission with a bit error rate of 3.7×10−6, the energy efficiency is better than 1.2 pJ/bit. This modulator is suitable for application such as low power, short range, ultra high data rate wireless communication.
internet of things
energy efficiency
InP
wide-band
pulse amplitude modulation
RF-DAC
DHBT
Författare
Frida Strömbeck
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Zhongxia Simon He
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Herbert Zirath
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
IEEE MTT-S International Microwave Symposium Digest
0149645X (ISSN)
Vol. 2018-June 931-933 8439488978-153865067-7 (ISBN)
2018 IEEE/MTT-S International Microwave Symposium, IMS 2018
Philadelphia, USA,
Philadelphia, USA,
Styrkeområden
Nanovetenskap och nanoteknik
Ämneskategorier
Kommunikationssystem
DOI
10.1109/MWSYM.2018.8439488