Stable and tunable charge carrier control of graphene for quantum resistance metrology
Paper in proceedings, 2018

Here we demonstrate a stable and tunable method to alter the carrier concentration of epitaxial graphene grown on silicon carbide. This technique relies on chemical doping by an acceptor molecule. Through careful tuning one can produce chemically doped graphene quantum resistance devices which show long-term stability in ambient conditions and have performance comparable to that of GaAs quantum resistance standards. This development paves the way for controlled device fabrication of graphene quantum hall resistance standards, which can be reliably tailored to operate below 5 T and above 4 K out-of-the-box, without further adjustments from the end-user.

graphene

quantum hall effect

measurement standards

chemical doping

Author

Hans He

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Samuel Lara Avila

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Tobias Bergsten

RISE Research Institutes of Sweden

Gunnar Eklund

RISE Research Institutes of Sweden

Kyung Ho Kim

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Rositza Yakimova

Linköping University

Yung Woo Park

University of Pennsylvania

Seoul National University

Sergey Zuev

Chalmers, Mathematical Sciences, Analysis and Probability Theory

2018 Conference on Precision Electromagnetic Measurements (CPEM 2018)

8501252

2018 Conference on Precision Electromagnetic Measurements, CPEM 2018
Paris, France,

Subject Categories

Medical Equipment Engineering

Other Electrical Engineering, Electronic Engineering, Information Engineering

Condensed Matter Physics

DOI

10.1109/CPEM.2018.8501252

More information

Latest update

1/22/2019