An E-band silicon-ic-to-waveguide contactless transition incorporating a low-loss spatial power combiner
Paper in proceedings, 2019
A novel contactless transition from a (Bi)CMOS Silicon IC (p-doped substrate) to a metal waveguide in E-Band is presented. This transition also incorporates a spatial power combiner in air to enable direct electromagnetic coupling from an array of on-chip microstrip transmission lines to a single waveguide mode, and vice versa. The transition is relatively low loss and is particularly suitable for high-power mm-wave applications. The simulated return loss of a four-channel passive back-to-back transition is better than 10 dB over the frequency band ranging from 60-90 GHz (E-Band). The average insertion loss of a single transition is 1.31 dB over the entire E-Band.
Millimeter wave integrated circuits (MMIC)
Electromagnetic coupling
Power combiners
E-Band
Waveguide transitions
Author
Piyush Kaul
Eindhoven University of Technology
Alhassan Aljarosha
Eindhoven University of Technology
Chalmers, Electrical Engineering, Communication and Antenna Systems, Antennas
A. B. Smolders
Eindhoven University of Technology
Peter Baltus
Eindhoven University of Technology
Marion Matters-Kammerer
Eindhoven University of Technology
Rob Maaskant
Chalmers, Electrical Engineering, Communication and Antenna Systems, Communication Systems
Eindhoven University of Technology
Asia-Pacific Microwave Conference Proceedings, APMC
Vol. 2018-November 1528-1530 8617206
30th Asia-Pacific Microwave Conference, APMC 2018
Kyoto, Japan,
Kyoto, Japan,
Subject Categories
Other Physics Topics
Other Electrical Engineering, Electronic Engineering, Information Engineering
Condensed Matter Physics
DOI
10.23919/APMC.2018.8617206