An E-band silicon-ic-to-waveguide contactless transition incorporating a low-loss spatial power combiner
Paper in proceedings, 2019

A novel contactless transition from a (Bi)CMOS Silicon IC (p-doped substrate) to a metal waveguide in E-Band is presented. This transition also incorporates a spatial power combiner in air to enable direct electromagnetic coupling from an array of on-chip microstrip transmission lines to a single waveguide mode, and vice versa. The transition is relatively low loss and is particularly suitable for high-power mm-wave applications. The simulated return loss of a four-channel passive back-to-back transition is better than 10 dB over the frequency band ranging from 60-90 GHz (E-Band). The average insertion loss of a single transition is 1.31 dB over the entire E-Band.

Millimeter wave integrated circuits (MMIC)

Electromagnetic coupling

Power combiners

E-Band

Waveguide transitions

Author

Piyush Kaul

Eindhoven University of Technology

Alhassan Aljarosha

Eindhoven University of Technology

Chalmers, Electrical Engineering, Communication and Antenna Systems, Antennas

A. B. Smolders

Eindhoven University of Technology

Peter Baltus

Eindhoven University of Technology

Marion Matters-Kammerer

Eindhoven University of Technology

Rob Maaskant

Chalmers, Electrical Engineering, Communication and Antenna Systems, Communication Systems

Eindhoven University of Technology

Asia-Pacific Microwave Conference Proceedings, APMC

Vol. 2018-November 1528-1530 8617206

30th Asia-Pacific Microwave Conference, APMC 2018
Kyoto, Japan,

Subject Categories

Other Physics Topics

Other Electrical Engineering, Electronic Engineering, Information Engineering

Condensed Matter Physics

DOI

10.23919/APMC.2018.8617206

More information

Latest update

8/20/2019