An E-band silicon-ic-to-waveguide contactless transition incorporating a low-loss spatial power combiner
Paper in proceeding, 2018
A novel contactless transition from a (Bi)CMOS Silicon IC (p-doped substrate) to a metal waveguide in E-Band is presented. This transition also incorporates a spatial power combiner in air to enable direct electromagnetic coupling from an array of on-chip microstrip transmission lines to a single waveguide mode, and vice versa. The transition is relatively low loss and is particularly suitable for high-power mm-wave applications. The simulated return loss of a four-channel passive back-to-back transition is better than 10 dB over the frequency band ranging from 60-90 GHz (E-Band). The average insertion loss of a single transition is 1.31 dB over the entire E-Band.
E-Band
Power combiners
Millimeter wave integrated circuits (MMIC)
Waveguide transitions
Electromagnetic coupling
Author
Piyush Kaul
Eindhoven University of Technology
Alhassan Aljarosha
Chalmers, Electrical Engineering, Communication, Antennas and Optical Networks
Eindhoven University of Technology
A. B. Smolders
Eindhoven University of Technology
Peter Baltus
Eindhoven University of Technology
Marion Matters-Kammerer
Eindhoven University of Technology
Rob Maaskant
Eindhoven University of Technology
Chalmers, Electrical Engineering, Communication, Antennas and Optical Networks
Asia-Pacific Microwave Conference Proceedings, APMC
Vol. 2018-November 1528-1530
978-490233945-1 (ISBN)
30th Asia-Pacific Microwave Conference, APMC 2018
Kyoto, Japan,
Kyoto, Japan,
Subject Categories
Other Physics Topics
Other Electrical Engineering, Electronic Engineering, Information Engineering
Condensed Matter Physics
DOI
10.23919/APMC.2018.8617206