An E-band silicon-ic-to-waveguide contactless transition incorporating a low-loss spatial power combiner
Paper i proceeding, 2019

A novel contactless transition from a (Bi)CMOS Silicon IC (p-doped substrate) to a metal waveguide in E-Band is presented. This transition also incorporates a spatial power combiner in air to enable direct electromagnetic coupling from an array of on-chip microstrip transmission lines to a single waveguide mode, and vice versa. The transition is relatively low loss and is particularly suitable for high-power mm-wave applications. The simulated return loss of a four-channel passive back-to-back transition is better than 10 dB over the frequency band ranging from 60-90 GHz (E-Band). The average insertion loss of a single transition is 1.31 dB over the entire E-Band.

Millimeter wave integrated circuits (MMIC)

Electromagnetic coupling

Power combiners

E-Band

Waveguide transitions

Författare

Piyush Kaul

Technische Universiteit Eindhoven

Alhassan Aljarosha

Technische Universiteit Eindhoven

Chalmers, Elektroteknik, Kommunikations- och antennsystem, Antennsystem

A. B. Smolders

Technische Universiteit Eindhoven

Peter Baltus

Technische Universiteit Eindhoven

Marion Matters-Kammerer

Technische Universiteit Eindhoven

Rob Maaskant

Chalmers, Elektroteknik, Kommunikations- och antennsystem, Kommunikationssystem

Technische Universiteit Eindhoven

Asia-Pacific Microwave Conference Proceedings, APMC

Vol. 2018-November 1528-1530 8617206

30th Asia-Pacific Microwave Conference, APMC 2018
Kyoto, Japan,

Ämneskategorier

Annan fysik

Annan elektroteknik och elektronik

Den kondenserade materiens fysik

DOI

10.23919/APMC.2018.8617206

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Senast uppdaterat

2019-08-20