Towards Oxide Electronics: a Roadmap
Journal article, 2019
At the end of a rush lasting over half a century, in which CMOS technology has been experiencing a constant and breathtaking increase of device speed and density, Moore’s law is approaching the insurmountable barrier given by the ultimate atomic nature of matter. A major challenge for 21st century scientists is finding novel strategies, concepts and materials for replacing silicon-based CMOS semiconductor technologies and guaranteeing a continued and steady technological progress in next decades. Among the materials classes candidate to contribute to this momentous challenge, oxide films and heterostructures are a particularly appealing hunting ground. The vastity, intended in pure chemical terms, of this class of compounds, the complexity of their correlated behaviour, and the wealth of functional properties they display, has already made these systems the subject of choice, worldwide, of a strongly networked, dynamic and interdisciplinary research community.
Oxide science and technology has been the target of a wide four-year project, named Towards Oxide-Based Electronics (TO-BE), that has been recently running in Europe and has involved as participants several hundred scientists from 29 EU countries. In this review and perspective paper, published as a final deliverable of the TO-BE Action, the opportunities of oxides as future electronic materials for Information and Communication Technologies ICT and Energy are discussed. The paper is organized as a set of contributions, all selected and ordered as individual building blocks of a wider general scheme. After a brief preface by the editors and an introductory contribution, two sections follow. The first is mainly devoted to providing a perspective on the latest theoretical and experimental methods that are employed to investigate oxides and to produce oxide-based films, heterostructures and devices. In the second, all contributions are dedicated to different specific fields of applications of oxide thin films and heterostructures, in sectors as data storage and computing, optics and plasmonics, magnonics, energy conversion and harvesting, and power electronics.
Oxide science and technology has been the target of a wide four-year project, named Towards Oxide-Based Electronics (TO-BE), that has been recently running in Europe and has involved as participants several hundred scientists from 29 EU countries. In this review and perspective paper, published as a final deliverable of the TO-BE Action, the opportunities of oxides as future electronic materials for Information and Communication Technologies ICT and Energy are discussed. The paper is organized as a set of contributions, all selected and ordered as individual building blocks of a wider general scheme. After a brief preface by the editors and an introductory contribution, two sections follow. The first is mainly devoted to providing a perspective on the latest theoretical and experimental methods that are employed to investigate oxides and to produce oxide-based films, heterostructures and devices. In the second, all contributions are dedicated to different specific fields of applications of oxide thin films and heterostructures, in sectors as data storage and computing, optics and plasmonics, magnonics, energy conversion and harvesting, and power electronics.
Author
M. Coll
Institute of Material Science of Barcelona (ICMAB)
J. Fontcuberta
Institute of Material Science of Barcelona (ICMAB)
M. Althammer
Walther-Meissner-Institute for Low Temperature Research
Technical University of Munich
M. Bibes
Thales Group
H. Boschker
Max Planck Society
A. Calleja
Oxolutia S.L
G. Cheng
University of Science and Technology of China
University of Pittsburgh
Pittsburgh Quantum Institute
M. Cuoco
University of Salerno
R. Dittmann
Forschungszentrum Jülich
B. Dkhil
Laboratoire Structures, Propriétés et Modélisation des Solides
I. El Baggari
Cornell University
M. Fanciulli
University of Milano-Bicocca
I. Fina
Institute of Material Science of Barcelona (ICMAB)
E. Fortunato
CEMOP/UNINOVA
Nova University of Lisbon
C. Frontera
Institute of Material Science of Barcelona (ICMAB)
S. Fujita
Kyoto University
V. Garcia
Thales Group
S. T.B. Goennenwein
Technische Universität Dresden
C. G. Granqvist
Uppsala University
J. Grollier
Thales Group
R. Gross
Walther-Meissner-Institute for Low Temperature Research
Technical University of Munich
Nanosystems Initiative Munich (NIM)
A. Hagfeldt
Swiss Federal Institute of Technology in Lausanne (EPFL)
G. Herranz
Institute of Material Science of Barcelona (ICMAB)
K. Hono
National Institute for Materials Science (NIMS)
E. Houwman
MESA Institute for Nanotechnology
M. Huijben
MESA Institute for Nanotechnology
Alexei Kalaboukhov
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
D. J. Keeble
University of Dundee
G. Koster
MESA Institute for Nanotechnology
L. F. Kourkoutis
Kavli Institute at Cornell for Nanoscale Science
Cornell University
J. Levy
University of Pittsburgh
Pittsburgh Quantum Institute
M. Lira-Cantu
Institut Catala de Nanociencia i Nanotecnologia
J. L. MacManus-Driscoll
University of Cambridge
Jochen Mannhart
Max Planck Society
R. Martins
University of Milano-Bicocca
Consiglo Nazionale Delle Richerche
S. Menzel
Pittsburgh Quantum Institute
T. Mikolajick
Technische Universität Dresden
NaMLab GGmbH
M. Napari
University of Cambridge
M. D. Nguyen
MESA Institute for Nanotechnology
G. A. Niklasson
Uppsala University
C. Paillard
University of Arkansas System
S. Panigrahi
CEMOP/UNINOVA
Nova University of Lisbon
G. Rijnders
MESA Institute for Nanotechnology
F. Sánchez
Institute of Material Science of Barcelona (ICMAB)
P. Sanchis
Polytechnic University of Valencia (UPV)
S. Sanna
Technical University of Denmark (DTU)
D. G. Schlom
Cornell University
U. Schroeder
NaMLab GGmbH
K. M. Shen
Kavli Institute at Cornell for Nanoscale Science
Cornell University
A. Siemon
RWTH Aachen University
Matjaz Spreitzer
Jozef Stefan Institute
H. Sukegawa
National Institute for Materials Science (NIMS)
R. Tamayo
Oxolutia S.L
J. van den Brink
Leibniz Institute for Solid State and Materials Research Dresedn
N. Pryds
Technical University of Denmark (DTU)
F. Miletto Granozio
Superconductors, oxides and other innovative materials and devices
Applied Surface Science
0169-4332 (ISSN)
Vol. 482 1-93Subject Categories
Materials Chemistry
Nano Technology
Condensed Matter Physics
DOI
10.1016/j.apsusc.2019.03.312