Towards Oxide Electronics: a Roadmap
Artikel i vetenskaplig tidskrift, 2019
At the end of a rush lasting over half a century, in which CMOS technology has been experiencing a constant and breathtaking increase of device speed and density, Moore’s law is approaching the insurmountable barrier given by the ultimate atomic nature of matter. A major challenge for 21st century scientists is finding novel strategies, concepts and materials for replacing silicon-based CMOS semiconductor technologies and guaranteeing a continued and steady technological progress in next decades. Among the materials classes candidate to contribute to this momentous challenge, oxide films and heterostructures are a particularly appealing hunting ground. The vastity, intended in pure chemical terms, of this class of compounds, the complexity of their correlated behaviour, and the wealth of functional properties they display, has already made these systems the subject of choice, worldwide, of a strongly networked, dynamic and interdisciplinary research community.
Oxide science and technology has been the target of a wide four-year project, named Towards Oxide-Based Electronics (TO-BE), that has been recently running in Europe and has involved as participants several hundred scientists from 29 EU countries. In this review and perspective paper, published as a final deliverable of the TO-BE Action, the opportunities of oxides as future electronic materials for Information and Communication Technologies ICT and Energy are discussed. The paper is organized as a set of contributions, all selected and ordered as individual building blocks of a wider general scheme. After a brief preface by the editors and an introductory contribution, two sections follow. The first is mainly devoted to providing a perspective on the latest theoretical and experimental methods that are employed to investigate oxides and to produce oxide-based films, heterostructures and devices. In the second, all contributions are dedicated to different specific fields of applications of oxide thin films and heterostructures, in sectors as data storage and computing, optics and plasmonics, magnonics, energy conversion and harvesting, and power electronics.
Oxide science and technology has been the target of a wide four-year project, named Towards Oxide-Based Electronics (TO-BE), that has been recently running in Europe and has involved as participants several hundred scientists from 29 EU countries. In this review and perspective paper, published as a final deliverable of the TO-BE Action, the opportunities of oxides as future electronic materials for Information and Communication Technologies ICT and Energy are discussed. The paper is organized as a set of contributions, all selected and ordered as individual building blocks of a wider general scheme. After a brief preface by the editors and an introductory contribution, two sections follow. The first is mainly devoted to providing a perspective on the latest theoretical and experimental methods that are employed to investigate oxides and to produce oxide-based films, heterostructures and devices. In the second, all contributions are dedicated to different specific fields of applications of oxide thin films and heterostructures, in sectors as data storage and computing, optics and plasmonics, magnonics, energy conversion and harvesting, and power electronics.
Författare
M. Coll
Institut de Ciència de Materials de Barcelona (ICMAB-CSIC)
J. Fontcuberta
Institut de Ciència de Materials de Barcelona (ICMAB-CSIC)
M. Althammer
Walther-Meissner-Institut für Tieftemperaturforschung
Technische Universität München
M. Bibes
Thales Group
H. Boschker
Max-Planck-Gesellschaft
A. Calleja
Oxolutia S.L
G. Cheng
University of Science and Technology of China
University of Pittsburgh
Pittsburgh Quantum Institute
M. Cuoco
Universita degli Studi di Salerno
R. Dittmann
Forschungszentrum Jülich
B. Dkhil
Laboratoire Structures, Propriétés et Modélisation des Solides
I. El Baggari
Cornell University
M. Fanciulli
Universita' degli Studi di Milano-Bicocca
I. Fina
Institut de Ciència de Materials de Barcelona (ICMAB-CSIC)
E. Fortunato
CEMOP/UNINOVA
Universidade NOVA de Lisboa
C. Frontera
Institut de Ciència de Materials de Barcelona (ICMAB-CSIC)
S. Fujita
Kyoto University
V. Garcia
Thales Group
S. T.B. Goennenwein
Technische Universität Dresden
C. G. Granqvist
Uppsala universitet
J. Grollier
Thales Group
R. Gross
Walther-Meissner-Institut für Tieftemperaturforschung
Technische Universität München
Nanosystems Initiative Munich (NIM)
A. Hagfeldt
Ecole Polytechnique Federale de Lausanne (EPFL)
G. Herranz
Institut de Ciència de Materials de Barcelona (ICMAB-CSIC)
K. Hono
National Institute for Materials Science (NIMS)
E. Houwman
MESA Institute for Nanotechnology
M. Huijben
MESA Institute for Nanotechnology
Alexei Kalaboukhov
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
D. J. Keeble
University of Dundee
G. Koster
MESA Institute for Nanotechnology
L. F. Kourkoutis
Kavli Institute at Cornell for Nanoscale Science
Cornell University
J. Levy
University of Pittsburgh
Pittsburgh Quantum Institute
M. Lira-Cantu
Institut Catala de Nanociencia i Nanotecnologia
J. L. MacManus-Driscoll
University of Cambridge
Jochen Mannhart
Max-Planck-Gesellschaft
R. Martins
Universita' degli Studi di Milano-Bicocca
Consiglo Nazionale Delle Richerche
S. Menzel
Pittsburgh Quantum Institute
T. Mikolajick
Technische Universität Dresden
NaMLab GGmbH
M. Napari
University of Cambridge
M. D. Nguyen
MESA Institute for Nanotechnology
G. A. Niklasson
Uppsala universitet
C. Paillard
University of Arkansas System
S. Panigrahi
CEMOP/UNINOVA
Universidade NOVA de Lisboa
G. Rijnders
MESA Institute for Nanotechnology
F. Sánchez
Institut de Ciència de Materials de Barcelona (ICMAB-CSIC)
P. Sanchis
Universitat Politecnica de Valencia (UPV)
S. Sanna
Danmarks Tekniske Universitet (DTU)
D. G. Schlom
Cornell University
U. Schroeder
NaMLab GGmbH
K. M. Shen
Kavli Institute at Cornell for Nanoscale Science
Cornell University
A. Siemon
RWTH Aachen University
Matjaz Spreitzer
Institut Jožef Stefan
H. Sukegawa
National Institute for Materials Science (NIMS)
R. Tamayo
Oxolutia S.L
J. van den Brink
Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden
N. Pryds
Danmarks Tekniske Universitet (DTU)
F. Miletto Granozio
Superconductors, oxides and other innovative materials and devices
Applied Surface Science
0169-4332 (ISSN)
Vol. 482 1-93Ämneskategorier
Materialkemi
Nanoteknik
Den kondenserade materiens fysik
DOI
10.1016/j.apsusc.2019.03.312