Effect of oxygen vacancies in the SrTiO3 substrate on the electrical properties of the LaAlO3/SrTiO3 interface
Journal article, 2007

We experimentally investigated optical, electrical, and microstructural properties of heterointerfaces between two thin-film perovskite insulating materials, SrTiO3 (STO) and LaAlO3 (LAO), deposited at different oxygen pressure conditions. Cathode and photoluminescence experiments show that oxygen vacancies are formed in the bulk STO substrate during the growth of LAO films, resulting in high electrical conductivity and mobility values. In both high and low oxygen pressure interfaces, the electrical Hall mobilities follow a similar power-law dependence as observed in oxygen reduced STO bulk samples. The results are confirmed on a microscopic level by local strain fields at the interface reaching 10 nm into the STO substrate.

substrates

lanthanum compounds

strontium compounds

photoluminescence

Hall mobility

crystal microstructure

interface structure

cathodoluminescence

insulating thin films

vacancies (crystal)

electrical conductivity

Author

Alexei Kalaboukhov

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Robert Gunnarsson

Chalmers, Microtechnology and Nanoscience (MC2)

Johan Börjesson

Chalmers, Applied Physics, Microscopy and Microanalysis

Eva Olsson

Chalmers, Applied Physics, Microscopy and Microanalysis

Dag Winkler

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Tord Claeson

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Physical Review B - Condensed Matter and Materials Physics

1098-0121 (ISSN)

Vol. 75 12 121404R-

Subject Categories

Condensed Matter Physics

More information

Created

10/7/2017