Effect of oxygen vacancies in the SrTiO3 substrate on the electrical properties of the LaAlO3/SrTiO3 interface
Artikel i vetenskaplig tidskrift, 2007

We experimentally investigated optical, electrical, and microstructural properties of heterointerfaces between two thin-film perovskite insulating materials, SrTiO3 (STO) and LaAlO3 (LAO), deposited at different oxygen pressure conditions. Cathode and photoluminescence experiments show that oxygen vacancies are formed in the bulk STO substrate during the growth of LAO films, resulting in high electrical conductivity and mobility values. In both high and low oxygen pressure interfaces, the electrical Hall mobilities follow a similar power-law dependence as observed in oxygen reduced STO bulk samples. The results are confirmed on a microscopic level by local strain fields at the interface reaching 10 nm into the STO substrate.

substrates

lanthanum compounds

strontium compounds

photoluminescence

Hall mobility

crystal microstructure

interface structure

cathodoluminescence

insulating thin films

vacancies (crystal)

electrical conductivity

Författare

Alexei Kalaboukhov

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Robert Gunnarsson

Chalmers, Mikroteknologi och nanovetenskap (MC2)

Johan Börjesson

Chalmers, Teknisk fysik, Mikroskopi och mikroanalys

Eva Olsson

Chalmers, Teknisk fysik, Mikroskopi och mikroanalys

Dag Winkler

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Tord Claeson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Physical Review B - Condensed Matter and Materials Physics

1098-0121 (ISSN)

Vol. 75 121404R-

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