Ferroelectric properties of BaTiO3 thin films co-doped with Mn and Nb
Journal article, 2019

We report on properties of BaTiO3 thin films where the bandgap is tuned via aliovalent doping of Mn and Nb ions co-doped at the Ti site. The doped films show single-phase tetragonal structure, growing epitaxially with a smooth interface to the substrate. Using piezoforce microscopy, we find that both doped and undoped films exhibit good ferroelectric response. The piezoelectric domain switching in the films was confirmed by measuring local hysteresis of the polarization at several different areas across the thin films, demonstrating a switchable ferroelectric state. The doping of the BaTiO3 also reduces the bandgap of the material from 3.2 eV for BaTiO3 to nearly 2.7 eV for the 7.5% doped sample, suggesting the viability of the films for effective light harvesting in the visible spectrum. The results demonstrate co-doping as an effective strategy for bandgap engineering and a guide for the realization of visible-light applications using its ferroelectric properties.


Dibya Phuyal

Uppsala University

Soham Mukherjee

Uppsala University

Somnath Jana

Uppsala University

Fernand Denoel

Uppsala University

Venkata Kamalakar Mutta

Uppsala University

Sergei M. Butorin

Uppsala University

Alexei Kalaboukhov

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

H. Rensmo

Uppsala University

Olof Karis

Uppsala University

AIP Advances

2158-3226 (ISSN)

Vol. 9 9 095207

Subject Categories


Materials Chemistry

Condensed Matter Physics



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