Ferroelectric properties of BaTiO3 thin films co-doped with Mn and Nb
Artikel i vetenskaplig tidskrift, 2019

We report on properties of BaTiO3 thin films where the bandgap is tuned via aliovalent doping of Mn and Nb ions co-doped at the Ti site. The doped films show single-phase tetragonal structure, growing epitaxially with a smooth interface to the substrate. Using piezoforce microscopy, we find that both doped and undoped films exhibit good ferroelectric response. The piezoelectric domain switching in the films was confirmed by measuring local hysteresis of the polarization at several different areas across the thin films, demonstrating a switchable ferroelectric state. The doping of the BaTiO3 also reduces the bandgap of the material from 3.2 eV for BaTiO3 to nearly 2.7 eV for the 7.5% doped sample, suggesting the viability of the films for effective light harvesting in the visible spectrum. The results demonstrate co-doping as an effective strategy for bandgap engineering and a guide for the realization of visible-light applications using its ferroelectric properties.


Dibya Phuyal

Uppsala universitet

Soham Mukherjee

Uppsala universitet

Somnath Jana

Uppsala universitet

Fernand Denoel

Uppsala universitet

Venkata Kamalakar Mutta

Uppsala universitet

Sergei M. Butorin

Uppsala universitet

Alexei Kalaboukhov

Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik

H. Rensmo

Uppsala universitet

Olof Karis

Uppsala universitet

AIP Advances

2158-3226 (ISSN) 21583226 (eISSN)

Vol. 9 9 095207




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