High transparency Bi2Se3 topological insulator nanoribbon Josephson junctions with low resistive noise properties
Journal article, 2019

Bi2Se3 nanoribbons, grown by catalyst-free Physical Vapor Deposition, have been used to fabricate high quality Josephson junctions with Al superconducting electrodes. The conductance spectra (dI/dV) of the junctions show clear dip-peak structures characteristic of multiple Andreev reflections. The temperature dependence of the dip-peak features reveals a highly transparent Al/Bi2Se3 topological insulator nanoribbon interface and Josephson junction barrier. This is supported by the high values of the Bi2Se3 induced gap and of IcRn (where Ic is the critical current and Rn is the normal resistance of the junction) product both of the order of 160 μeV, a value close to the Al gap. The devices present an extremely low relative resistance noise below 1 × 10-12 μm2/Hz comparable to the best Al tunnel junctions, which indicates a high stability in the transmission coefficients of transport channels. The ideal Al/Bi2Se3 interface properties, perfect transparency for Cooper pair transport in conjunction with low resistive noise, make these junctions a suitable platform for further studies of the induced topological superconductivity and Majorana bound states physics.

Physical vapor deposition

Nanocatalysts

Bismuth compounds

Interface states

Aluminum

Quantum optics

Nanoribbons

Electric insulators

Author

Gunta Kunakova

University of Latvia

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Thilo Bauch

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Edoardo Trabaldo

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

J. Andzane

University of Latvia

Donats Érts

University of Latvia

Floriana Lombardi

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 115 17 172601

Subject Categories

Textile, Rubber and Polymeric Materials

Other Chemical Engineering

Condensed Matter Physics

DOI

10.1063/1.5123554

More information

Latest update

11/28/2019