Unveiling the plasma wave in the channel of graphene field-effect transistor
Paper in proceeding, 2019
Coupling an electromagnetic wave at GHz to THz frequencies into the channel of a graphene field-effect transistor (GFET) provokes collective charge carrier oscillations of the two-dimensional electron gas (2DEG) known as plasma waves. Here, we report the very first experimental and direct mapping of the electric field distribution in a gated GFET at nanometer length scales using scattering-type scanning near-field microscopy (s-SNOM) at 2 THz. Based on the experimental results we deduce the plasma wave velocity for different gate bias voltages, which is in good agreement with the theoretical prediction.
THz frequencies
scattering-type scanning near-field microscopy
graphene field-effect transistor
plasma waves
Author
Amin Soltani
Goethe University Frankfurt
Frederik Kuschewski
Technische Universität Dresden
Marlene Bonmann
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Andrey Generalov
Aalto University
Andrei Vorobiev
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Florain Ludwig
Goethe University Frankfurt
Matthias M. Wiecha
Goethe University Frankfurt
Dovilė Čibiraitė
Goethe University Frankfurt
Frederik Walla
Goethe University Frankfurt
Susanne C. Kehr
Technische Universität Dresden
Lucas M. Eng
Technische Universität Dresden
Jan Stake
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Hartmut G. Roskos
Goethe University Frankfurt
International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
21622027 (ISSN) 21622035 (eISSN)
Vol. 2019-September 8873874
2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
Paris, France,
Paris, France,
Areas of Advance
Information and Communication Technology
Nanoscience and Nanotechnology
Infrastructure
Kollberg Laboratory
Nanofabrication Laboratory
Driving Forces
Sustainable development
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
Condensed Matter Physics
DOI
10.1109/IRMMW-THz.2019.8873874