Performance comparison of silicon substrates for IC-waveguide integration based on a contactless transition at mm-wave frequencies
Paper in proceedings, 2019

This paper presents a comparison between different silicon (Si) substrates used in Si-based IC technologies at E-Band (71-86 GHz). A unique low-loss and compact contactless transition from a silicon IC (p-doped substrate) to a metal waveguide is used. The proposed transition incorporates a spatial power combiner to enable direct electromagnetic coupling from an array of patches on the IC to a metal waveguide. This design enables a high-power transition from an IC to a waveguide and/or antenna at millimeter-wave (mm-wave) frequencies, where a galvanic contact between the two parts is avoided.

Author

Alhassan Aljarosha

Chalmers, Electrical Engineering, Communication and Antenna Systems, Antennas

Eindhoven University of Technology

Piyush Kaul

Eindhoven University of Technology

A. Bart Smolders

Eindhoven University of Technology

Marion Matters-Kammerer

Eindhoven University of Technology

Rob Maaskant

Chalmers, Electrical Engineering, Communication and Antenna Systems

Eindhoven University of Technology

2019 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting, APSURSI 2019 - Proceedings

Vol. July 2019 1081-1082 8888834

2019 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting, APSURSI 2019
Atlanta, GA, USA,

Subject Categories

Other Physics Topics

Communication Systems

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/APUSNCURSINRSM.2019.8888834

More information

Latest update

12/6/2019