Performance comparison of silicon substrates for IC-waveguide integration based on a contactless transition at mm-wave frequencies
Paper i proceeding, 2019

This paper presents a comparison between different silicon (Si) substrates used in Si-based IC technologies at E-Band (71-86 GHz). A unique low-loss and compact contactless transition from a silicon IC (p-doped substrate) to a metal waveguide is used. The proposed transition incorporates a spatial power combiner to enable direct electromagnetic coupling from an array of patches on the IC to a metal waveguide. This design enables a high-power transition from an IC to a waveguide and/or antenna at millimeter-wave (mm-wave) frequencies, where a galvanic contact between the two parts is avoided.

Författare

Alhassan Aljarosha

Chalmers, Elektroteknik, Kommunikations- och antennsystem, Antennsystem

Technische Universiteit Eindhoven

Piyush Kaul

Technische Universiteit Eindhoven

A. Bart Smolders

Technische Universiteit Eindhoven

Marion Matters-Kammerer

Technische Universiteit Eindhoven

Rob Maaskant

Chalmers, Elektroteknik, Kommunikations- och antennsystem

Technische Universiteit Eindhoven

2019 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting, APSURSI 2019 - Proceedings

Vol. July 2019 1081-1082 8888834

2019 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting, APSURSI 2019
Atlanta, GA, USA,

Ämneskategorier

Annan fysik

Kommunikationssystem

Annan elektroteknik och elektronik

DOI

10.1109/APUSNCURSINRSM.2019.8888834

Mer information

Senast uppdaterat

2019-12-06