A 10.8-GHz GaN MMIC Load-Modulated Amplifier
Paper in proceeding, 2019
This work presents a 10.8-GHz load-modulated MMIC power amplifier designed in the 0.25 μm GaN-on-SiC Cree Wolfspeed process. The carrier amplifier has a single stage and is biased in class-AB, while the peaking path is designed as a two-stage amplifier. The output power at saturation is 35.5 dBm with 7.6 dB of gain and PAE of 38%. At 7-dB output power backoff, the PAE remains above 26%. The combiner network is synthesised with a black-box method constrained to exhibit Doherty amplifier behaviour. The disagreement between measurements and simulations is explained in part through an analysis of the interstage matching network using scattering parameters renormalised to complex terminations.
load modulation
Gallium Nitride
power amplifier
Doherty
Monolithic Microwave Integrated Circuit (MMIC)
Author
Allison Duh
University of Colorado
Maxwell Duffy
University of Colorado
William Hallberg
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Mauricio Pinto
University of Colorado
Taylor Barton
University of Colorado
Zoya Popovic
University of Colorado
2019 49th European Microwave Conference, EuMC 2019
408-411 8910923
49th European Microwave Conference, EuMC 2019
Paris, France,
Paris, France,
Subject Categories (SSIF 2011)
Telecommunications
Communication Systems
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.23919/EuMC.2019.8910923