A 24 GHz Sub-Harmonically Pumped Resistive Mixer in GaN HEMT Technology
Paper in proceeding, 2020
—This paper presents the design and the characterization of a 24 GHz sub-harmonically pumped resistive mixer (SHM) in an advanced gallium nitride (GaN) high electron mobility transistor (HEMT) technology. The mixer is desired for building up a high-performance phaselocked W-band signal source, and is designed in a singlebalanced configuration, where the balanced LO input is generated by an on-chip first order lattice balun. In measurement, a conversion loss around 12 dB is achieved at the RF bandwidth of 22-28 GHz and the IF bandwidth of 3-6 GHz with a LO power of 10 dBm. The mixer exhibits an RF input P1dB of 13 dBm, and the measured LO to IF isolation achieves 40 dB at the desired LO of 10 GHz. To the best of the author’s knowledge, this is the first sub-harmonically pumped mixer in GaN HEMT technology.
conversion loss
GaN HEMT
isolation
—resistive mixer
Author
Yu Yan
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Thi Ngoc Do Thanh
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Dan Kuylenstierna
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020
978-172819749-4 (ISBN)
2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
New York, USA,
New York, USA,
GaN mm-wave Radar Components Embedded (GRACE)
European Commission (EC) (EC/H2020/821270), 2018-11-01 -- 2020-10-31.
Areas of Advance
Information and Communication Technology
Subject Categories
Telecommunications
Signal Processing
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/BCICTS48439.2020.9392981