Analysis the reverse conduction characteristic and influence of anti-parallel SiC SBD of eGaN HEMT
Paper in proceeding, 2019
eGaN HEMT has been developed with up to 650V blocking capability with lower conduction losses and higher switching speed compared MOSFET. Self-commutated reverse conduction is a very important characteristic of eGaN HEMT, especially for synchronous rectification topologies. This paper introduces the reverse conduction mechanism and characteristics of eGaN HEMT, and establishes a double pulse test platform to explore the influence of anti-parallel SiC SBD for eGaN HEMT on the reverse conduction characteristic and switching characteristic of eGaN HEMT, which will provide some help for the application of the eGaN HEMT's self-commutated reverse conduction.
Author
Haihong Qin
Nanjing University of Aeronautics and Astronautics
Zihe Peng
Nanjing University of Aeronautics and Astronautics
Ying Zhang
Nanjing University of Aeronautics and Astronautics
Wenlu Wang
Nanjing University of Aeronautics and Astronautics
Qian Xun
Chalmers, Electrical Engineering, Electric Power Engineering
PCIM Asia 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Proceedings
140-146
9783800749713 (ISBN)
2019 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Asia 2019
Shanghai, China,
Shanghai, China,
Subject Categories
Ceramics
Vehicle Engineering
Other Electrical Engineering, Electronic Engineering, Information Engineering