Analysis the reverse conduction characteristic and influence of anti-parallel SiC SBD of eGaN HEMT

Paper i proceeding, 2019

eGaN HEMT has been developed with up to 650V blocking capability with lower conduction losses and higher switching speed compared MOSFET. Self-commutated reverse conduction is a very important characteristic of eGaN HEMT, especially for synchronous rectification topologies. This paper introduces the reverse conduction mechanism and characteristics of eGaN HEMT, and establishes a double pulse test platform to explore the influence of anti-parallel SiC SBD for eGaN HEMT on the reverse conduction characteristic and switching characteristic of eGaN HEMT, which will provide some help for the application of the eGaN HEMT's self-commutated reverse conduction.