Tuning Hole Mobility of Individual p-Doped GaAs Nanowires by Uniaxial Tensile Stress
Journal article, 2021

Strain engineering provides an effective way of tailoring the electronic and optoelectronic properties of semiconductor nanomaterials and nanodevices, giving rise to novel functionalities. Here, we present direct experimental evidence of strain-induced modifications of hole mobility in individual gallium arsenide (GaAs) nanowires, using in situ transmission electron microscopy (TEM). The conductivity of the nanowires varied with applied uniaxial tensile stress, showing an initial decrease of similar to 5-20% up to a stress of 1-2 GPa, subsequently increasing up to the elastic limit of the nanowires. This is attributed to a hole mobility variation due to changes in the valence band structure caused by stress and strain. The corresponding lattice strain in the nanowires was quantified by in situ four dimensional scanning TEM and showed a complex spatial distribution at all stress levels. Meanwhile, a significant red shift of the band gap induced by the stress and strain was unveiled by monochromated electron energy loss spectroscopy.

strain engineering

GaAs nanowires

hole transport

phonon scattering

band shift

Author

Lunjie Zeng

Chalmers, Physics, Nano and Biophysics

Jonatan Holmér

Chalmers, Physics, Nano and Biophysics

Rohan Dhall

Lawrence Berkeley National Laboratory

Christoph Gammer

Austrian Academy of Sciences

Andrew M. Minor

Lawrence Berkeley National Laboratory

University of California at Berkeley

Eva Olsson

Chalmers, Physics, Nano and Biophysics

Nano Letters

1530-6984 (ISSN) 1530-6992 (eISSN)

Vol. 21 9 3894-3900

Enabling Science and Technology through European Electron Microscopy (ESTEEM3)

European Commission (EC) (823717), 2019-01-01 -- 2022-12-31.

In Situ transmissionselektronmikroskopi studier av inverkan av mekanisk töjning hos halvledande nanotrådar

Swedish Research Council (VR) (2016-04618), 2017-01-01 -- 2020-12-31.

Subject Categories

Applied Mechanics

Other Materials Engineering

Condensed Matter Physics

DOI

10.1021/acs.nanolett.1c00353

PubMed

33914543

More information

Latest update

6/21/2021