A Comparative Study of Freewheeling Methods for eGaN HEMTs in a Phase-leg Configuration
Journal article, 2021
enhancement gallium nitride high-electron-mobility transistors (eGaN HEMTs)
freewheeling
Body diodes
MOSFETs
reverse conduction
Author
Haihong Qin
Nanjing University of Aeronautics and Astronautics
Zihe Peng
Nanjing University of Aeronautics and Astronautics
Ying Zhang
China Electronic Technology Group Corporation
Qian Xun
Chalmers, Electrical Engineering, Electric Power Engineering
Dafeng Fu
Nanjing University of Aeronautics and Astronautics
IEEE Journal of Emerging and Selected Topics in Power Electronics
2168-6777 (ISSN) 2168-6785 (eISSN)
Vol. 9 3 3657-3670 9162072Subject Categories
Energy Engineering
Other Materials Engineering
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/JESTPE.2020.3014964