A Comparative Study of Freewheeling Methods for eGaN HEMTs in a Phase-leg Configuration
Artikel i vetenskaplig tidskrift, 2021
enhancement gallium nitride high-electron-mobility transistors (eGaN HEMTs)
freewheeling
Body diodes
MOSFETs
reverse conduction
Författare
Haihong Qin
Nanjing University of Aeronautics and Astronautics
Zihe Peng
Nanjing University of Aeronautics and Astronautics
Ying Zhang
China Electronic Technology Group Corporation
Qian Xun
Chalmers, Elektroteknik, Elkraftteknik
Dafeng Fu
Nanjing University of Aeronautics and Astronautics
IEEE Journal of Emerging and Selected Topics in Power Electronics
2168-6777 (ISSN) 2168-6785 (eISSN)
Vol. 9 3 3657-3670 9162072Ämneskategorier
Energiteknik
Annan materialteknik
Annan elektroteknik och elektronik
DOI
10.1109/JESTPE.2020.3014964