Nanopatterning of oxide 2-dimensional electron systems using low-temperature ion milling
Journal article, 2022
We present a 'top-down' patterning technique based on ion milling performed at low-temperature, for the realization of oxide two-dimensional electron system devices with dimensions down to 160 nm. Using electrical transport and scanning Superconducting QUantum Interference Device measurements we demonstrate that the low-temperature ion milling process does not damage the 2DES properties nor creates oxygen vacancies-related conducting paths in the STO substrate. As opposed to other procedures used to realize oxide 2DES devices, the one we propose gives lateral access to the 2DES along the in-plane directions, finally opening the way to coupling with other materials, including superconductors.
oxide field effect devices
nanodevices
oxide 2DES
Author
M. D'Antuono
University of Naples Federico II
National Research Council of Italy (CNR)
Alexei Kalaboukhov
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
R. Caruso
Brookhaven National Laboratory
National Research Council of Italy (CNR)
University of Naples Federico II
S. Wissberg
Bar-Ilan University
S. Weitz Sobelman
Bar-Ilan University
B. Kalisky
Bar-Ilan University
G. Ausanio
National Research Council of Italy (CNR)
University of Naples Federico II
M. Salluzzo
National Research Council of Italy (CNR)
D. Stornaiuolo
University of Naples Federico II
National Research Council of Italy (CNR)
Nanotechnology
0957-4484 (ISSN) 1361-6528 (eISSN)
Vol. 33 8 085301Subject Categories
Ceramics
Materials Chemistry
Condensed Matter Physics
DOI
10.1088/1361-6528/ac385e
PubMed
34757952