Nanopatterning of oxide 2-dimensional electron systems using low-temperature ion milling
Artikel i vetenskaplig tidskrift, 2022
We present a 'top-down' patterning technique based on ion milling performed at low-temperature, for the realization of oxide two-dimensional electron system devices with dimensions down to 160 nm. Using electrical transport and scanning Superconducting QUantum Interference Device measurements we demonstrate that the low-temperature ion milling process does not damage the 2DES properties nor creates oxygen vacancies-related conducting paths in the STO substrate. As opposed to other procedures used to realize oxide 2DES devices, the one we propose gives lateral access to the 2DES along the in-plane directions, finally opening the way to coupling with other materials, including superconductors.
oxide field effect devices
nanodevices
oxide 2DES
Författare
M. D'Antuono
Universita degli Studi di Napoli Federico II
Consiglio Nazionale delle Ricerche (CNR)
Alexei Kalaboukhov
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
R. Caruso
Brookhaven National Laboratory
Consiglio Nazionale delle Ricerche (CNR)
Universita degli Studi di Napoli Federico II
S. Wissberg
Bar-Ilan University
S. Weitz Sobelman
Bar-Ilan University
B. Kalisky
Bar-Ilan University
G. Ausanio
Consiglio Nazionale delle Ricerche (CNR)
Universita degli Studi di Napoli Federico II
M. Salluzzo
Consiglio Nazionale delle Ricerche (CNR)
D. Stornaiuolo
Universita degli Studi di Napoli Federico II
Consiglio Nazionale delle Ricerche (CNR)
Nanotechnology
0957-4484 (ISSN) 1361-6528 (eISSN)
Vol. 33 8 085301Ämneskategorier
Keramteknik
Materialkemi
Den kondenserade materiens fysik
DOI
10.1088/1361-6528/ac385e
PubMed
34757952