Magnetotransport Studies of Encapsulated Topological Insulator Bi2Se3 Nanoribbons
Journal article, 2022
The majority of proposed exotic applications employing 3D topological insulators require high-quality materials with reduced dimensions. Catalyst-free, PVD-grown Bi2Se3 nanoribbons are particularly promising for these applications due to the extraordinarily high mobility of their surface Dirac states, and low bulk carrier densities. However, these materials are prone to the formation of surface accumulation layers; therefore, the implementation of surface encapsulation layers and the choice of appropriate dielectrics for building gate-tunable devices are important. In this work, all-around ZnO-encapsulated nanoribbons are investigated. Gate-dependent magnetotransport measurements show improved charge transport characteristics as reduced nanoribbon/substrate interface carrier densities compared to the values obtained for the as-grown nanoribbons on SiO2 substrates.
magnetotransport
ZnO
Bi2Se3 nanoribbons
Author
Gunta Kunakova
University of Latvia
Edijs Kauranens
University of Latvia
Kiryl Niherysh
University of Latvia
Belarusian State University of Informatics and Radioelectronics
Mikhael Bechelany
University of Montpellier
Krisjanis Smits
University of Latvia
Gatis Mozolevskis
University of Latvia
Thilo Bauch
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Floriana Lombardi
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Donats Erts
University of Latvia
Nanomaterials
20794991 (eISSN)
Vol. 12 5 768High Frequency Topological Insulator devices for Metrology (HiTIMe)
European Commission (EC) (EC/H2020/766714), 2018-02-01 -- 2022-01-31.
Subject Categories
Materials Chemistry
Other Materials Engineering
Condensed Matter Physics
DOI
10.3390/nano12050768
PubMed
35269256