Magnetotransport Studies of Encapsulated Topological Insulator Bi2Se3 Nanoribbons
Journal article, 2022

The majority of proposed exotic applications employing 3D topological insulators require high-quality materials with reduced dimensions. Catalyst-free, PVD-grown Bi2Se3 nanoribbons are particularly promising for these applications due to the extraordinarily high mobility of their surface Dirac states, and low bulk carrier densities. However, these materials are prone to the formation of surface accumulation layers; therefore, the implementation of surface encapsulation layers and the choice of appropriate dielectrics for building gate-tunable devices are important. In this work, all-around ZnO-encapsulated nanoribbons are investigated. Gate-dependent magnetotransport measurements show improved charge transport characteristics as reduced nanoribbon/substrate interface carrier densities compared to the values obtained for the as-grown nanoribbons on SiO2 substrates.



Bi2Se3 nanoribbons


Gunta Kunakova

University of Latvia

Edijs Kauranens

University of Latvia

Kiryl Niherysh

University of Latvia

Belarusian State University of Informatics and Radioelectronics

Mikhael Bechelany

University of Montpellier

Krisjanis Smits

University of Latvia

Gatis Mozolevskis

University of Latvia

Thilo Bauch

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Floriana Lombardi

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Donats Erts

University of Latvia


20794991 (eISSN)

Vol. 12 5 768

High Frequency Topological Insulator devices for Metrology (HiTIMe)

European Commission (EC) (EC/H2020/766714), 2018-02-01 -- 2022-01-31.

Subject Categories

Materials Chemistry

Other Materials Engineering

Condensed Matter Physics





More information

Latest update

1/3/2024 9