Magnetotransport Studies of Encapsulated Topological Insulator Bi2Se3 Nanoribbons
Artikel i vetenskaplig tidskrift, 2022
The majority of proposed exotic applications employing 3D topological insulators require high-quality materials with reduced dimensions. Catalyst-free, PVD-grown Bi2Se3 nanoribbons are particularly promising for these applications due to the extraordinarily high mobility of their surface Dirac states, and low bulk carrier densities. However, these materials are prone to the formation of surface accumulation layers; therefore, the implementation of surface encapsulation layers and the choice of appropriate dielectrics for building gate-tunable devices are important. In this work, all-around ZnO-encapsulated nanoribbons are investigated. Gate-dependent magnetotransport measurements show improved charge transport characteristics as reduced nanoribbon/substrate interface carrier densities compared to the values obtained for the as-grown nanoribbons on SiO2 substrates.
magnetotransport
ZnO
Bi2Se3 nanoribbons
Författare
Gunta Kunakova
Latvijas Universitate
Edijs Kauranens
Latvijas Universitate
Kiryl Niherysh
Latvijas Universitate
Belarusian State University of Informatics and Radioelectronics
Mikhael Bechelany
Université de Montpellier
Krisjanis Smits
Latvijas Universitate
Gatis Mozolevskis
Latvijas Universitate
Thilo Bauch
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Floriana Lombardi
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Donats Erts
Latvijas Universitate
Nanomaterials
20794991 (eISSN)
Vol. 12 5 768High Frequency Topological Insulator devices for Metrology (HiTIMe)
Europeiska kommissionen (EU) (EC/H2020/766714), 2018-02-01 -- 2022-01-31.
Ämneskategorier
Materialkemi
Annan materialteknik
Den kondenserade materiens fysik
DOI
10.3390/nano12050768
PubMed
35269256