A two-step parameter extraction methodology for graphene field-effect transistors
Paper in proceeding, 2022

Accurate device models and parameter extraction methods are of utmost importance for characterizing graphene field-effect transistors and for predicting their performance in circuit applications. For DC characterization, accurate extraction of the transconductance parameter (i.e., low-field mobility) and series resistance is of particular importance. In this paper, methods for extraction of these parameters will be discussed. A first-order mobility degradation model that can be used to separate information about mobility degradation and series resistance for a set of graphene field-effect transistors will also be discussed. 

Keywords: graphene field-effect transistors, model parameter extraction, charge-carrier mobility, series resistance, mobility

charge-carrier mobility

mobility

graphene field-effect transistors

model parameter extraction

series resistance

Author

Kjell Jeppson

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

IEEE International Conference on Microelectronic Test Structures

Vol. March
978-166548566-1 (ISBN)

International Conference on Microelectronic Test Structures (ICMTS)
Cleveland, Ohio, USA,

Graphene Core Project 2 (Graphene Flagship)

European Commission (EC) (EC/H2020/785219), 2018-04-01 -- 2020-03-31.

Infrastructure

Kollberg Laboratory

Areas of Advance

Nanoscience and Nanotechnology

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

Nano Technology

DOI

10.1109/ICMTS50340.2022.9898249

More information

Latest update

4/21/2023