Growth of UVB tunnel-junction LEDs: Impact of GaN interlayer thickness on morphology and electro-optical characteristics
Paper in proceeding, 2022
gan interlayer
uvb
tunnel junction
led
Author
Massimo Grigoletto
Technische Universität Berlin
Sarina Graupeter
Technische Universität Berlin
Estrella Torres
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Joachim Ciers
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Johannes Enslin
Technische Universität Berlin
Luca Sulmoni
Technische Universität Berlin
Tim Kolbe
Ferdinand-Braun-Institut fur Hochstfrequenztechnik
Tim Wernicke
Technische Universität Berlin
Åsa Haglund
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Michael Kneissl
Technische Universität Berlin
International Workshop on Nitride semiconductors (IWN)
PP312
Berlin , Germany,
Areas of Advance
Nanoscience and Nanotechnology
Materials Science
Subject Categories
Physical Sciences
Other Materials Engineering
Electrical Engineering, Electronic Engineering, Information Engineering
Nano Technology
Condensed Matter Physics
Infrastructure
Chalmers Materials Analysis Laboratory
Nanofabrication Laboratory