Growth of UVB tunnel-junction LEDs: Impact of GaN interlayer thickness on morphology and electro-optical characteristics
Paper in proceeding, 2022

gan interlayer

uvb

tunnel junction

led

Author

Massimo Grigoletto

Technische Universität Berlin

Sarina Graupeter

Technische Universität Berlin

Estrella Torres

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Joachim Ciers

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Johannes Enslin

Technische Universität Berlin

Luca Sulmoni

Technische Universität Berlin

Tim Kolbe

Ferdinand-Braun-Institut fur Hochstfrequenztechnik

Tim Wernicke

Technische Universität Berlin

Åsa Haglund

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Michael Kneissl

Technische Universität Berlin

International Workshop on Nitride semiconductors (IWN)

PP312

International Workshop on Nitride semiconductors (IWN)
Berlin , Germany,

Areas of Advance

Nanoscience and Nanotechnology

Materials Science

Subject Categories

Physical Sciences

Other Materials Engineering

Electrical Engineering, Electronic Engineering, Information Engineering

Nano Technology

Condensed Matter Physics

Infrastructure

Chalmers Materials Analysis Laboratory

Nanofabrication Laboratory

More information

Latest update

10/26/2023