Probing resistive switching in HfO2 /Al2 O3 bilayer oxides using in-situ transmission electron microscopy
Journal article, 2023
In this work, we investigate the resistive switching in hafnium dioxide (HfO2) and aluminum oxide (Al2O3) bilayered stacks using in-situ transmission electron microscopy and X-ray energy dispersive spectroscopy. Conductance of the HfO2/Al2O3 stack changes gradually upon electrical stressing which is related to the formation of extended nanoscale physical defects at the HfO2/Al2O3 interface and the migration and re-crystallization of Al into the oxide bulk. The results suggest two competing physical mechanisms including the redistribution of oxygen ions and the migration of Al species from the Al electrode during the switching process. While the HfO2/Al2O3 bilayered stack appears to be a good candidate for RRAM technology, the low diffusion barrier of the active Al electrode causes severe Al migration in the bi-layered oxides leading to the device to fail in resetting, and thereby, largely limiting the overall switching performance and material reliability.
Reliability
Resistive Memory
Diffusion Barrier
TEM
Metal migration
Author
Alok Ranjan
Singapore University of Technology and Design
Chalmers, Physics, Nano and Biophysics
Hejun Xu
East China Normal University
Chaolun Wang
East China Normal University
Joel Molina
National Institute of Astrophysics, Optics and Electronics
Xing Wu
East China Normal University
Hui Zhang
MEMS Key Laboratory of the Ministry of Education
Litao Sun
MEMS Key Laboratory of the Ministry of Education
Junhao Chu
East China Normal University
Kin Leong Pey
Singapore University of Technology and Design
Applied Materials Today
23529407 (eISSN)
Vol. 31 101739Subject Categories
Condensed Matter Physics
DOI
10.1016/j.apmt.2023.101739