Alok Ranjan

Postdoc at Nano and Biophysics DP

Dr. Alok Ranjan is a postdoctoral researcher in Prof. Eva Olsson’s research group at the Department of Physics. Alok is passionate about developing experimental techniques for the visualization and characterization of advanced nano-electronic devices at the atomic length scales. This is achieved by using the state-of-art aberration corrected transmission electron microscopy (TEM) imaging and electron energy loss spectroscopy (EELS). Alok’s current project investigates the feasibility of using emerging graphene based 2D layered materials for the sustainable future electronics. Interest is also to apply in-operando TEM techniques (under electrical, mechanical, and thermal excitations) for 2D layered materials. This project is a part of “2D Tech” research initiative which aims to establish Chalmers as an internationally visible and competitive Swedish hub for excellent 2D materials research and technological innovation



Prior to joining Chalmers, Alok has been working at the Singapore University of Technology and Design (SUTD), Institute of Materials Research and Engineering (IMRE), and Institute of Microelectronics (IME) at A*STAR in Singapore. Earlier research works involve the physical and failure analysis of CMOS based gate dielectrics and emerging memory devices, including resistive random-access memory (RRAM) using conduction atomic force microscopy (CAFM), scanning tunneling microscopy (STM) and TEM techniques. Alok has published more than 20 technical papers, a book chapter, and volunteers as a reviewer for various journals including Applied Physics Letters, Scientific Reports, ACS Applied Materials and Interfaces and Microelectronics Reliability.

Source: chalmers.se
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Showing 9 publications

2024

Guidelines for the Design of Random Telegraph Noise-Based True Random Number Generators

Tommaso Zanotti, Alok Ranjan, Sean J. O'Shea et al
IEEE Transactions on Device and Materials Reliability. Vol. 24 (2), p. 184-193
Journal article
2024

Electrodes for High-κ Molecular Crystal Antimony Trioxide Gate Dielectrics for 2D Electronics

Alok Ranjan, Lunjie Zeng, Eva Olsson
Advanced Electronic Materials. Vol. In Press
Journal article
2024

Estimating the Number of Defects in a Single Breakdown Spot of a Gate Dielectric

Alok Ranjan, Andrea Padovani, Behnood Dianat et al
IEEE Electron Device Letters. Vol. 45 (5), p. 809-812
Journal article
2023

Molecular Bridges Link Monolayers of Hexagonal Boron Nitride during Dielectric Breakdown

Alok Ranjan, Sean J. O'Shea, Andrea Padovani et al
ACS Applied Electronic Materials. Vol. 5 (2), p. 1262-1276
Journal article
2023

Adhesion Microscopy as a Nanoscale Probe for Oxidation and Charge Generation at Metal-Oxide Interfaces

Alok Ranjan, Andrea Padovani, Behnood Dianat et al
ACS Applied Electronic Materials. Vol. 5 (9), p. 5176-5186
Journal article
2023

Reliability Analysis of Random Telegraph Noisebased True Random Number Generators

Tommaso Zanotti, Alok Ranjan, Sean J. O'Shea et al
IEEE International Integrated Reliability Workshop Final Report. Vol. 2023 IEEE International Integrated Reliability Workshop, IIRW 2023
Paper in proceeding
2023

Convolution Neural Networks and Position Averaged Convergent Beam Electron Diffraction for Determining the Structure of 2D Materials

Andrew Yankovich, Magnus Röding, Victor Wåhlstrand Skärström et al
Microscopy and Microanalysis. Vol. 29 (1), p. 691-693
Journal article
2023

Probing resistive switching in HfO<inf>2</inf>/Al<inf>2</inf>O<inf>3</inf> bilayer oxides using in-situ transmission electron microscopy

Alok Ranjan, Hejun Xu, Chaolun Wang et al
Applied Materials Today. Vol. 31
Journal article
2023

Probing Dielectric Breakdown in Single Crystal Hexagonal Boron Nitride

Alok Ranjan, Andrew Yankovich, Kenji Watanabe et al
Microscopy and Microanalysis. Vol. 29 (1), p. 1998-2000
Journal article

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