Alok Ranjan
Dr. Alok Ranjan focuses on developing next-generation techniques for advanced materials characterization, with a particular emphasis on pushing the boundaries of transmission electron microscopy (TEM) and in situ methods to gain critical insights into material behavior. By enabling a deeper understanding of structure - property relationships at the nanoscale, these approaches aim to contribute to solving key societal challenges in areas such as sustainable energy, electronics, and next-generation technologies. My research centers on application-oriented electron microscopy, with a core focus on correlating structure and property relationships. This involves following two objectives: 1. Development of in situ solutions and MEMS chip development The goal is to advance infrastructure for in situ electron microscopy experiments by adapting existing solutions and developing novel approaches, particularly for solid and liquid environments. Recognizing that in situ experiment requirements vary significantly across material systems, I am developing versatile, operando methodologies. such as those enabled by customized MEMS chip development. I am exploring a broader range of systems driven by varied applications including 2D materials, semiconductors, materials for quantum technology, and soft materials for emerging applications. Examples of in situ applications include high electric and magnetic field and temperature both under vacuum and liquid environments. 2. Multi-modal analysis I am establishing workflows that enable seamless integration between TEM and complementary characterization techniques. While TEM offers atomic-scale resolution, its stringent sample requirements often limit applicability. To address this, together with collaborators, I am developing strategies for transferring and correlating samples across platforms such as optical microscopy and synchrotron-based methods, enabling comprehensive, multi-scale analysis.
Showing 15 publications
Probing Traps in Ta2O5/Al2O3 Memristive Switching Devices
Ultrathin 3R-MoS2 metasurfaces with atomically precise edges for efficient nonlinear nanophotonics
Guidelines for the Design of Random Telegraph Noise-Based True Random Number Generators
Dielectric Breakdown Mechanisms in High-κ Antimony Trioxide (Sb<inf>2</inf>O<inf>3</inf>)
Electrodes for High-κ Molecular Crystal Antimony Trioxide Gate Dielectrics for 2D Electronics
Estimating the Number of Defects in a Single Breakdown Spot of a Gate Dielectric
Molecular Bridges Link Monolayers of Hexagonal Boron Nitride during Dielectric Breakdown
Probing Dielectric Breakdown in Single Crystal Hexagonal Boron Nitride
Reliability Analysis of Random Telegraph Noisebased True Random Number Generators
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