Alok Ranjan
Dr. Alok Ranjan is a postdoctoral researcher in Prof. Eva Olsson’s research group at the Department of Physics. Alok is passionate about developing experimental techniques for the visualization and characterization of advanced nano-electronic devices at the atomic length scales. This is achieved by using the state-of-art aberration corrected transmission electron microscopy (TEM) imaging and electron energy loss spectroscopy (EELS). Alok’s current project investigates the feasibility of using emerging graphene based 2D layered materials for the sustainable future electronics. Interest is also to apply in-operando TEM techniques (under electrical, mechanical, and thermal excitations) for 2D layered materials. This project is a part of “2D Tech” research initiative which aims to establish Chalmers as an internationally visible and competitive Swedish hub for excellent 2D materials research and technological innovation
Prior to joining Chalmers, Alok has been working at the Singapore University of Technology and Design (SUTD), Institute of Materials Research and Engineering (IMRE), and Institute of Microelectronics (IME) at A*STAR in Singapore. Earlier research works involve the physical and failure analysis of CMOS based gate dielectrics and emerging memory devices, including resistive random-access memory (RRAM) using conduction atomic force microscopy (CAFM), scanning tunneling microscopy (STM) and TEM techniques. Alok has published more than 20 technical papers, a book chapter, and volunteers as a reviewer for various journals including Applied Physics Letters, Scientific Reports, ACS Applied Materials and Interfaces and Microelectronics Reliability.
Visar 9 publikationer
Guidelines for the Design of Random Telegraph Noise-Based True Random Number Generators
Electrodes for High-κ Molecular Crystal Antimony Trioxide Gate Dielectrics for 2D Electronics
Estimating the Number of Defects in a Single Breakdown Spot of a Gate Dielectric
Molecular Bridges Link Monolayers of Hexagonal Boron Nitride during Dielectric Breakdown
Reliability Analysis of Random Telegraph Noisebased True Random Number Generators
Probing Dielectric Breakdown in Single Crystal Hexagonal Boron Nitride
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