Alok Ranjan
Dr. Alok Ranjan’s research focuses on advancing electron microscopy techniques for the characterization of advanced materials with the transmission electron microscopy (TEM), in situ and operando methodologies. The aim is to unravel nanoscale structure–property relationships and understand dynamic material behavior. A key focus of Dr. Ranjan’s research is the development of versatile experimental platforms for in situ electron microscopy, including customized microelectromechanical systems (MEMS) chips that enable the investigation of materials under controlled environments and external stimuli. This facilitates the study of material behavior under realistic operating conditions in both vacuum and liquid environments. By combining MEMS, electron microscopy, and materials science, his work investigates dynamic nanoscale processes in functional materials and devices. The MEMS platform is used to study a broad range of material and devices, including two-dimensional materials, semiconductor materials and devices, quantum materials, Li-metal battery and soft materials. Dr. Ranjan received PhD from the Singapore University of Technology and Design. He subsequently joined Chalmers University of Technology, Gothenburg, Sweden as a postdoctoral researcher and currently holds a joint visiting researcher position involving the Department of Physics and Astronomy at Chalmers University of Technology and the Department of Physics at the University of Gothenburg.
Visar 16 publikationer
Probing Traps in Ta2O5/Al2O3 Memristive Switching Devices
Ultrathin 3R-MoS2 metasurfaces with atomically precise edges for efficient nonlinear nanophotonics
Enabling Tailored In Situ Electron Microscopy Studies at Low Temperature
Dielectric Breakdown Mechanisms in High-κ Antimony Trioxide (Sb<inf>2</inf>O<inf>3</inf>)
Guidelines for the Design of Random Telegraph Noise-Based True Random Number Generators
Electrodes for High-κ Molecular Crystal Antimony Trioxide Gate Dielectrics for 2D Electronics
Estimating the Number of Defects in a Single Breakdown Spot of a Gate Dielectric
Molecular Bridges Link Monolayers of Hexagonal Boron Nitride during Dielectric Breakdown
Probing Dielectric Breakdown in Single Crystal Hexagonal Boron Nitride
Reliability Analysis of Random Telegraph Noisebased True Random Number Generators
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