Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress
Journal article, 2023
parameters optimization
SiC MOSFET
driving circuit
gate-source voltage
Author
Haihong Qin
Nanjing University of Aeronautics and Astronautics
Zhenhua Ba
Nanjing University of Aeronautics and Astronautics
Sixuan Xie
Nanjing University of Aeronautics and Astronautics
Zimo Zhang
Nanjing University of Aeronautics and Astronautics
Wenming Chen
Nanjing University of Aeronautics and Astronautics
Qian Xun
Chalmers, Electrical Engineering, Electric Power Engineering
Micromachines
2072666x (eISSN)
Vol. 14 3 505Subject Categories
Infrastructure Engineering
Vehicle Engineering
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.3390/mi14030505