Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress
Artikel i vetenskaplig tidskrift, 2023

In conventional parameters design, the driving circuit is usually simplified as an RLC second-order circuit, and the switching characteristics are optimized by selecting parameters, but the influence of switching characteristics on the driving circuit is not considered. In this paper, the insight mechanism for the gate-source voltage changed by overshoot and ringing caused by the high switching speed of SiC MOSFET is highlighted, and we propose an optimized design method to obtain optimal parameters of the SiC MOSFET driving circuit with consideration of parasitic parameters. Based on the double-pulse circuit, we evaluated the influence of main parameters on the gate-source voltage, including driving voltage, driving resistance, gate parasitic inductance, and stray inductance of the power circuit. A SiC-based boost PFC is constructed and tested. The test results show that the switching loss can be reduced by 7.282 W by using the proposed parameter optimization method, and the over-voltage stress of SiC MOSFET is avoided.

parameters optimization

SiC MOSFET

driving circuit

gate-source voltage

Författare

Haihong Qin

Nanjing University of Aeronautics and Astronautics

Zhenhua Ba

Nanjing University of Aeronautics and Astronautics

Sixuan Xie

Nanjing University of Aeronautics and Astronautics

Zimo Zhang

Nanjing University of Aeronautics and Astronautics

Wenming Chen

Nanjing University of Aeronautics and Astronautics

Qian Xun

Chalmers, Elektroteknik, Elkraftteknik

Micromachines

2072666x (eISSN)

Vol. 14 3 505

Ämneskategorier

Infrastrukturteknik

Farkostteknik

Annan elektroteknik och elektronik

DOI

10.3390/mi14030505

Mer information

Senast uppdaterat

2023-05-03