Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress
Artikel i vetenskaplig tidskrift, 2023
parameters optimization
SiC MOSFET
driving circuit
gate-source voltage
Författare
Haihong Qin
Nanjing University of Aeronautics and Astronautics
Zhenhua Ba
Nanjing University of Aeronautics and Astronautics
Sixuan Xie
Nanjing University of Aeronautics and Astronautics
Zimo Zhang
Nanjing University of Aeronautics and Astronautics
Wenming Chen
Nanjing University of Aeronautics and Astronautics
Qian Xun
Chalmers, Elektroteknik, Elkraftteknik
Micromachines
2072666x (eISSN)
Vol. 14 3 505Ämneskategorier
Infrastrukturteknik
Farkostteknik
Annan elektroteknik och elektronik
DOI
10.3390/mi14030505