Integrating InP MMICs and Silicon Micromachined Waveguides for sub-THz Systems
Journal article, 2023
A novel co-designed transition from InP monolithic microwave integrated circuits to silicon micromachined waveguides is presented. The transition couples a microstrip line to a substrate waveguide sitting on top of a vertical waveguide. The silicon part of the transition consists of a top and a bottom chip, fabricated in a very low-loss silicon micromachined waveguide technology using silicon on insulator wafers. The transition has been designed, fabricated and characterized for 220-330 GHz in a back-to-back configuration. Measured insertion loss is 3-6 dB at 250-300 GHz, and return loss is in excess of 5 dB.
Silicon
Coplanar waveguides
MMIC
waveguide
InP
Indium phosphide
Waveguide components
silicon micromachining
Waveguide transitions
III-V semiconductor materials
transition
terahertz
submillimeter wave
Waveguide lasers
Author
Bernhard Beuerle
Royal Institute of Technology (KTH)
Jan Svedin
Swedish Defence Research Agency (FOI)
Robert Malmqvist
Swedish Defence Research Agency (FOI)
Vessen Vassilev
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Umer Shah
Royal Institute of Technology (KTH)
Herbert Zirath
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Joachim Oberhammer
Royal Institute of Technology (KTH)
IEEE Electron Device Letters
0741-3106 (ISSN) 15580563 (eISSN)
Vol. 44 10 1800-1803Subject Categories
Telecommunications
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/LED.2023.3306798