Integrating InP MMICs and Silicon Micromachined Waveguides for sub-THz Systems
Artikel i vetenskaplig tidskrift, 2023
A novel co-designed transition from InP monolithic microwave integrated circuits to silicon micromachined waveguides is presented. The transition couples a microstrip line to a substrate waveguide sitting on top of a vertical waveguide. The silicon part of the transition consists of a top and a bottom chip, fabricated in a very low-loss silicon micromachined waveguide technology using silicon on insulator wafers. The transition has been designed, fabricated and characterized for 220-330 GHz in a back-to-back configuration. Measured insertion loss is 3-6 dB at 250-300 GHz, and return loss is in excess of 5 dB.
Silicon
Coplanar waveguides
MMIC
waveguide
InP
Indium phosphide
Waveguide components
silicon micromachining
Waveguide transitions
III-V semiconductor materials
transition
terahertz
submillimeter wave
Waveguide lasers
Författare
Bernhard Beuerle
Kungliga Tekniska Högskolan (KTH)
Jan Svedin
Totalförsvarets forskningsinstitut (FOI)
Robert Malmqvist
Totalförsvarets forskningsinstitut (FOI)
Vessen Vassilev
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Umer Shah
Kungliga Tekniska Högskolan (KTH)
Herbert Zirath
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Joachim Oberhammer
Kungliga Tekniska Högskolan (KTH)
IEEE Electron Device Letters
0741-3106 (ISSN) 15580563 (eISSN)
Vol. 44 10 1800-1803Ämneskategorier
Telekommunikation
Annan elektroteknik och elektronik
DOI
10.1109/LED.2023.3306798