Low-Vacuum Catalyst-Free Physical Vapor Deposition and Magnetotransport Properties of Ultrathin Bi2Se3 Nanoribbons
Journal article, 2023

In this work, a simple catalyst-free physical vapor deposition method is optimized by adjusting source material pressure and evaporation time for the reliable obtaining of freestanding nanoribbons with thicknesses below 15 nm. The optimum synthesis temperature, time and pressure were determined for an increased yield of ultrathin Bi2Se3 nanoribbons with thicknesses of 8–15 nm. Physical and electrical characterization of the synthesized Bi2Se3 nanoribbons with thicknesses below 15 nm revealed no degradation of properties of the nanoribbons, as well as the absence of the contribution of trivial bulk charge carriers to the total conductance of the nanoribbons.

bismuth selenide

ultrathin nanoribbons

magnetotransport properties

catalyst-free physical vapor deposition

bulk-free topological insulator

Author

Raitis Sondors

University of Latvia

Kiryl Niherysh

University of Latvia

J. Andzane

University of Latvia

Xavier Palermo

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Thilo Bauch

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Floriana Lombardi

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Donats Érts

University of Latvia

Nanomaterials

20794991 (eISSN)

Vol. 13 17 2484

High Frequency Topological Insulator devices for Metrology (HiTIMe)

European Commission (EC) (EC/H2020/766714), 2018-02-01 -- 2022-01-31.

Subject Categories

Materials Chemistry

Condensed Matter Physics

DOI

10.3390/nano13172484

PubMed

37686992

More information

Latest update

9/21/2023