Monolithically and Vertically Integrated LED-on-FET Device Based on a Novel GaN Epitaxial Structure
Journal article, 2023

Optoelectronic devices, such as light-emitting diodes (LEDs), based on GaN-based semiconductor compounds are widely used for their advantages of long life, high reliability, and low energy consumption. The persistent challenge is integrating LED with transistors to achieve smaller size, lighter weight, higher speed, and more reliable optoelectronic integrated circuits. Here, we report monolithically and vertically integrated LED-on-FET devices fabricated on a novel GaN epitaxial structure. The designed device structure and fabrication process are simple. It also eliminates the extra area occupied by the transistor, and the shared n-GaN layer between the LED and FET reduces interconnect resistance and improves reliability. The measured threshold voltage (V-Th) of the LED-on-FET device is extrapolated as 3.9 V at the voltage (V-DD) of 5 V, and V-Th decreases with the increase of V-DD . More importantly, the gate voltage (V-GS) shows good performance in modulated electroluminescence (EL) intensity and switching capability of the LED. The integrated LED efficiently emits light modulation with a wavelength of 440 nm at V-DD= 9 V and V-GS=4-9 V (step = 1 V), which are necessary for devices in applications, such as displays and smart lighting. This epitaxy structure and integration scheme is promising in achieving large-scale optoelectronic integrated circuits, such as the next-generation micro-LED and nano-LED with super compact integrated drivers.

light-emitting diode (LED)

Field-effect transistor (FET)

monolithically and vertically integrated

Author

Kui Pan

Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China

Fuzhou University

Kaixin Zhang

Fuzhou University

Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China

Liying Deng

Fuzhou University

Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China

Chang Lin

Fuzhou University

Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China

Yang Li

Fuzhou University

Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China

Hengshan Liu

Fujian Prima Optoelectronics Company Ltd.

Fan Zhang

Fujian Prima Optoelectronics Company Ltd.

Junyang Nie

Xi'an Jiaotong University

Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China

Fuzhou University

Jie Sun

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Anjun Su

Changsha Xiangji Haidun Technol Co Ltd

Nianrui Chen

Changsha Xiangji Haidun Technol Co Ltd

Jun Zhou

Changsha Xiangji Haidun Technol Co Ltd

Qun Yan

Fuzhou University

Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China

Tailiang Guo

Fuzhou University

Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China

IEEE Transactions on Electron Devices

0018-9383 (ISSN) 15579646 (eISSN)

Vol. 70 12 6393-6398

Subject Categories

Condensed Matter Physics

DOI

10.1109/TED.2023.3321705

More information

Latest update

3/30/2024