Wideband Reflection-Type p-i-n Diode Phase Shifters in GaAs MMIC Technology at W-Band
Paper in proceeding, 2023

In this paper, we report on developing W-band GaAs p-i-n diode phase shifters (PSs) with a wideband phase and amplitude response. The PSs employ the reflection-Type architecture with reflective loads providing discrete phase tunability through diode dc control. We address the design challenge of having a stable phase shift and a minimal insertion loss imbalance for the diodes with a relatively low commutation quality factor at high millimeter-wave frequencies. Two PS examples, namely 180-and 90-degree bits, are designed for the targeted (85-105) GHz operating band. The circuits were fabricated in the commercial PIN-pHEMT GaAs process with 8 × 8 μm2,p-i-n diodes. Both simulated and measured results are in good agreement demonstrating wideband frequency performance.

W-band

GaAs p-i-n diode

phase shifter

reflective load

Author

Artem Vilenskiy

Chalmers, Electrical Engineering, Communication, Antennas and Optical Networks

Yingqi Zhang

Chalmers, Electrical Engineering, Communication, Antennas and Optical Networks

Vessen Vassilev

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Viktor Chernikov

Chalmers, Electrical Engineering, Communication, Antennas and Optical Networks

Marianna Ivashina

Chalmers, Electrical Engineering, Communication, Antennas and Optical Networks

2023 18th European Microwave Integrated Circuits Conference, EuMIC 2023

209-212
9782874870736 (ISBN)

18th European Microwave Integrated Circuits Conference, EuMIC 2023
Berlin, Germany,

MyWave - Efficient Millimetre-Wave Communications for mobile users

European Commission (EC) (EC/H2020/860023), 2019-10-01 -- 2023-09-30.

Subject Categories

Atom and Molecular Physics and Optics

Communication Systems

DOI

10.23919/EuMIC58042.2023.10289038

More information

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1/3/2024 9