Current enhancement with alternating gate voltage in the Coulomb blockade regime of a single wall carbon nanotube
Journal article, 2004
We investigated the current–voltage characteristics of a carbon nanotube in a single electron transistor structure with alternating gate voltage. A continuous current enhancement effect with increasing frequency of the applied gate voltage up to 13 MHz is reported. Assuming that I=nef, more than 1000 electrons are driven to flow across the source–drain channel at VDS=100 mV, 13 MHz of gate voltage (Vp-p=2 V) and T=1.8 K. The continuous current enhancement is explained by the broadening effect of the discrete energy levels of the finite-length carbon nanotube.
carbon nanotubes
Author
H.Y. Yu
Seoul National University
DongSu Lee
Seoul National University
S.S. Kim
Seoul National University
B. Kim
Seoul National University
SangWook Lee
University of Gothenburg
J.G. Park
Seoul National University
S.H. Lee
Seoul National University
G.C. McIntosh
Seoul National University
YungWoo Park
Seoul National University
Mohammad Kabir
Chalmers, Microtechnology and Nanoscience (MC2), Solid State Electronics
Eleanor E B Campbell
University of Gothenburg
S. Roth
Max Planck Society
Applied Physics A: Materials Science and Processing
0947-8396 (ISSN) 1432-0630 (eISSN)
Vol. 79 7 1613-1615Subject Categories (SSIF 2011)
Condensed Matter Physics
DOI
10.1007/s00339-004-2906-5