Current enhancement with alternating gate voltage in the Coulomb blockade regime of a single wall carbon nanotube
Artikel i vetenskaplig tidskrift, 2004

We investigated the current–voltage characteristics of a carbon nanotube in a single electron transistor structure with alternating gate voltage. A continuous current enhancement effect with increasing frequency of the applied gate voltage up to 13 MHz is reported. Assuming that I=nef, more than 1000 electrons are driven to flow across the source–drain channel at VDS=100 mV, 13 MHz of gate voltage (Vp-p=2 V) and T=1.8 K. The continuous current enhancement is explained by the broadening effect of the discrete energy levels of the finite-length carbon nanotube.

carbon nanotubes


H.Y. Yu

Seoul National University

DongSu Lee

Seoul National University

S.S. Kim

Seoul National University

B. Kim

Seoul National University

SangWook Lee

Göteborgs universitet

J.G. Park

Seoul National University

S.H. Lee

Seoul National University

G.C. McIntosh

Seoul National University

YungWoo Park

Seoul National University

Mohammad Kabir

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fasta tillståndets elektronik

Eleanor E B Campbell

Göteborgs universitet

S. Roth

Max Planck-institutet

Applied Physics A: Materials Science and Processing

0947-8396 (ISSN) 1432-0630 (eISSN)

Vol. 79 1613-1615


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