Liquid Phase Deposition of Hafnium Oxide Thin Films
Journal article, 2024
Hafnium oxide (HfO2) thin films were successfully prepared by the liquid phase deposition (LPD) method. The surface appearance, composition, optical characteristics, and electrical properties of HfO2 thin films generated by LPD were studied, as well as the reaction mechanism. The results reveal that the chemical composition of HfO2 thin films generated by LPD is pure and the structure is dense and continuous. The physical and chemical properties are stable, and the film thickness is around 40 nm after sufficient growth. The transmittance of HfO2 films after annealing at 500 °C is greater than 93%, the leakage current density at 1 V is 1.38× 10-6 A/cm2, and the breakdown voltage is 6.4 V. At the same time, based on the capacitance value at 1 MHz, the dielectric constant of the HfO2 film is estimated to be around 20.4.
liquid phase deposition (LPD) method
hafnium oxide (HfO ) 2
Dielectric constant
leakage current density
Author
Xuanyu Zhu
Fuzhou University
Kaixin Zhang
Fuzhou University
Jie Sun
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Fuzhou University
Chang Lin
Fuzhou University
Kui Pan
Fuzhou University
Tianxi Yang
Fuzhou University
Zhonghang Huang
Fuzhou University
Liying Deng
Fuzhou University
Ziwen Yan
Fuzhou University
Yifeng Liu
Fuzhou University
Junyang Nie
Fuzhou University
Qun Yan
Fuzhou University
IEEE Transactions on Dielectrics and Electrical Insulation
1070-9878 (ISSN) 15584135 (eISSN)
Vol. 31 4 1659-1665Subject Categories
Condensed Matter Physics
DOI
10.1109/TDEI.2024.3359124