Al-BiSe-Al NanoribbonJosephson Junctions with Fabry-Perot Interference: Implicationsfor Phase-Coherent Topological Insulator-Based Superconducting Devices
Journal article, 2026

We investigate phase-coherent quantum transport in nanoscale Al-Bi2Se3-Al nanoribbon Josephson junctions by combining normal-state conductance spectroscopy with a junction-length-dependent study of Josephson transport. Differential conductance maps versus bias and gate voltage reveal Fabry-Perot interference, whose periodicity matches the nanoribbon width, consistent with transverse quantization and quasi-ballistic surface-state trajectories in 430 nm wide devices. A systematic investigation of the characteristic voltage I c R n as a function of junction length L exhibits a clear plateau for L <= 500 nm, indicative of a short ballistic contribution to the Josephson transport, and decreases for longer junctions as diffusive transport dominates. Together, Fabry-Perot interference and Josephson transport measurements provide complementary, channel-selective evidence for quasi-ballistic surface-state transport persisting over several hundred nanometers in hybrid topological insulator nanostructures. These results demonstrate the potential of Bi2Se3 nanoribbon Josephson junctions as a nanoscale platform for phase-coherent superconducting electronics, topological quantum computing architectures, and topological spintronic devices.

Josephsonjunctions

Fabry-Perot interference

transverse quantization

BiSe nanoribbons

quasi-ballistic transport.

Author

Kiryl Niherysh

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Nermin Trnjanin

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Ananthu Pullukattuthara Surendran

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Gunta Kunakova

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Xavier Palermo

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Domenico Montemurro

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Jana Andzane

University of Latvia

Donats Erts

University of Latvia

Dmitry S. Golubev

Aalto University

Samuel Lara Avila

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Floriana Lombardi

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Thilo Bauch

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

ACS APPLIED NANO MATERIALS

2574-0970 (eISSN)

Vol. In Press

High Frequency Topological Insulator devices for Metrology (HiTIMe)

European Commission (EC) (EC/H2020/766714), 2018-02-01 -- 2022-01-31.

QUantum Electronics Science and TECHnology training (QuESTech)

European Commission (EC) (EC/H2020/766025), 2018-01-01 -- 2021-12-31.

Subject Categories (SSIF 2025)

Condensed Matter Physics

DOI

10.1021/acsanm.6c01243

More information

Latest update

7/10/2026