A 25 dBm 95-115 GHz Coupler-Based Traveling-Wave MMIC Power Amplifier in GaAs pHEMT Technology
Paper in proceeding, 2026
This paper presents a 95-115 GHz power amplifier (PA) based on a coupler-enabled traveling-wave combiner/splitter network, implemented in a commercial 0.1 μ m GaAs pHEMT process. Directional couplers provide high inter-branch isolation, suppressing mutual load interactions between the combined unit amplifiers. The PA achieves a saturated output power of 24.5 dBm (± 0.7 dB) across a 20 GHz bandwidth, representing one of the highest reported power levels for GaAs PAs beyond 100 GHz. These results demonstrate the effectiveness of the coupler-based traveling-wave architecture for wideband, high-power W-band MMIC design.
MMIC
traveling-wave amplifier (TWA)
W-band
power combining
power amplifier (PA)
Gallium Arsenide (GaAs)
Author
Göksu Kaval
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Gotmic AB
M. Q. Bao
Ericsson
Gregor Lasser
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Marcus Gavell
Gotmic AB
Christian Fager
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
IEEE MTT-S International Microwave Symposium Digest
0149645X (ISSN)
577-5809798331547660 (ISBN)
2026 IEEE MTT-S Radio Frequency Technology and Techniques Symposium, IMS RFTT 2026
Boston, USA,
Boston, USA,
Areas of Advance
Information and Communication Technology
Subject Categories (SSIF 2025)
Other Electrical Engineering, Electronic Engineering, Information Engineering
Telecommunications
Signal Processing
DOI
10.1109/IMSRFTT43070.2026.11602498