A 25 dBm 95-115 GHz Coupler-Based Traveling-Wave MMIC Power Amplifier in GaAs pHEMT Technology
Paper i proceeding, 2026

This paper presents a 95-115 GHz power amplifier (PA) based on a coupler-enabled traveling-wave combiner/splitter network, implemented in a commercial 0.1 μ m GaAs pHEMT process. Directional couplers provide high inter-branch isolation, suppressing mutual load interactions between the combined unit amplifiers. The PA achieves a saturated output power of 24.5 dBm (± 0.7 dB) across a 20 GHz bandwidth, representing one of the highest reported power levels for GaAs PAs beyond 100 GHz. These results demonstrate the effectiveness of the coupler-based traveling-wave architecture for wideband, high-power W-band MMIC design.

MMIC

traveling-wave amplifier (TWA)

W-band

power combining

power amplifier (PA)

Gallium Arsenide (GaAs)

Författare

Göksu Kaval

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Gotmic AB

M. Q. Bao

Ericsson AB

Gregor Lasser

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Marcus Gavell

Gotmic AB

Christian Fager

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

IEEE MTT-S International Microwave Symposium Digest

0149645X (ISSN)

577-580
9798331547660 (ISBN)

2026 IEEE MTT-S Radio Frequency Technology and Techniques Symposium, IMS RFTT 2026
Boston, USA,

Styrkeområden

Informations- och kommunikationsteknik

Ämneskategorier (SSIF 2025)

Annan elektroteknik och elektronik

Telekommunikation

Signalbehandling

DOI

10.1109/IMSRFTT43070.2026.11602498

Mer information

Senast uppdaterat

2026-08-03