A 236–311-GHz SiGe BiCMOS Receiver for High Data Rate Communication
Journal article, 2026
An H-band (220–325 GHz) 90-nm silicon–germanium (SiGe) BiCMOS receiver (Rx) for high data rate communication is presented. It consists of an ×8 local oscillator (LO) multiplier chain and a Gilbert cell-based downconverter mixer. The 3-dB RF bandwidth is 75 GHz, using an IF of 1 GHz. At 288 GHz, the 3-dB IF bandwidth is 24 GHz. It supports data rates up to 100 Gb/s using 32-QAM modulation, with a signal-to-noise ratio (SNR) of 17.6 dB and error vector magnitude (EVM) of 8.4%. The DC power consumption for the Rx is 237 mW.
silicon–germanium (SiGe) BiCMOS
J-band
subterahertz (sub-THz)
high data rate
receiver
Energy efficient
Rx
H-band
Author
Frida Strömbeck
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Yu Yan
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Herbert Zirath
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
IEEE Microwave and Wireless Technology Letters
Vol. In Press
Towards Energy-Efficient Tbps Wireless Links (TeraGreen)
European Commission (EC) (EC/HC/101139117), 2024-01-01 -- 2028-06-30.
Areas of Advance
Information and Communication Technology
Subject Categories (SSIF 2025)
Other Electrical Engineering, Electronic Engineering, Information Engineering
Telecommunications
DOI
10.1109/LMWT.2026.3724382