A 236–311-GHz SiGe BiCMOS Receiver for High Data Rate Communication
Artikel i vetenskaplig tidskrift, 2026
An H-band (220–325 GHz) 90-nm silicon–germanium (SiGe) BiCMOS receiver (Rx) for high data rate communication is presented. It consists of an ×8 local oscillator (LO) multiplier chain and a Gilbert cell-based downconverter mixer. The 3-dB RF bandwidth is 75 GHz, using an IF of 1 GHz. At 288 GHz, the 3-dB IF bandwidth is 24 GHz. It supports data rates up to 100 Gb/s using 32-QAM modulation, with a signal-to-noise ratio (SNR) of 17.6 dB and error vector magnitude (EVM) of 8.4%. The DC power consumption for the Rx is 237 mW.
silicon–germanium (SiGe) BiCMOS
J-band
subterahertz (sub-THz)
high data rate
receiver
Energy efficient
Rx
H-band
Författare
Frida Strömbeck
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Yu Yan
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Herbert Zirath
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
IEEE Microwave and Wireless Technology Letters
Vol. In Press
Towards Energy-Efficient Tbps Wireless Links (TeraGreen)
Europeiska kommissionen (EU) (EC/HC/101139117), 2024-01-01 -- 2028-06-30.
Styrkeområden
Informations- och kommunikationsteknik
Ämneskategorier (SSIF 2025)
Annan elektroteknik och elektronik
Telekommunikation
DOI
10.1109/LMWT.2026.3724382