A Radio Frequency Single-Electron Transistor Based on an InAs/InP Heterostructure Nanowire
Journal article, 2008

We demonstrate radio frequency single-electron transistors fabricated from epitaxially grown InAs/InP heterostructure nanowires. Two sets of double-barrier wires with different barrier thicknesses were grown. The wires were suspended 15 nm above a metal gate electrode. Electrical measurements on a high-resistance nanowire showed regularly spaced Coulomb oscillations at a gate voltage from - 0.5 to at least 1.8 V. The charge sensitivity was measured to 32 mu e(rms) Hz (- 1/2) at 1.5 K. A low-resistance single-electron transistor showed regularly spaced oscillations only in a small gate-voltage region just before carrier depletion. This device had a charge sensitivity of 2.5 mu e(rms) Hz (- 1/2). At low frequencies this device showed a typical 1/f noise behavior, with a level extrapolated to 300 mu e(rms) Hz (- 1/2) at 10 Hz.

Author

Henrik A. Nilsson

Lund University

Tim Duty

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Simon Abay

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Christopher Wilson

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Jakob B. Wagner

University of Queensland

Claes Thelander

Lund University

Per Delsing

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Lars Samuelson

Lund University

Nano Letters

1530-6984 (ISSN) 1530-6992 (eISSN)

Vol. 8 3 872-875

Subject Categories

Condensed Matter Physics

DOI

10.1021/nl0731062

More information

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3/2/2018 9